Technical parameters/dissipated power: 2 W
Technical parameters/gain bandwidth product: 500 MHz
Technical parameters/minimum current amplification factor (hFE): 50 @250mA, 1V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-237-3
External dimensions/packaging: TO-237-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | TO-237-3 |
1000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
|
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|
|
TI | 功能相似 |
1000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
|
|||
2N6718
|
CJ | 功能相似 | TO-92 |
1000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN
|
||
MMBT5087
|
Fairchild | 功能相似 | SOT-23-3 |
SMD GENERAL PURPOSE LOW NOISE TRANSISTOR (PNP)
|
||
MMBT5087
|
SK Hynix | 功能相似 |
SMD GENERAL PURPOSE LOW NOISE TRANSISTOR (PNP)
|
|||
|
|
SHIKUES | 功能相似 | SOT-23-3 |
SMD GENERAL PURPOSE LOW NOISE TRANSISTOR (PNP)
|
||
MMBT5087LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT5087LT1G 单晶体管 双极, 通用, PNP, -50 V, 40 MHz, 225 mW, -50 mA, 40 hFE
|
||
ZTX451STZ
|
Diodes Zetex | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Medium Power
|
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