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Model MMBT5087

Description FAIRCHILD SEMICONDUCTOR MMBT5087 单晶体管双极, PNP, -50 V, 40 MHz, 350 mW, -100 mA, 250 hFE

Brand: Fairchild

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	40 MHz
Technical parameters/rated voltage (DC):	-50.0 V
Technical parameters/rated current:	-100 mA
Technical parameters/number of pins:	3
Technical parameters/polarity:	PNP, P-Channel
Technical parameters/dissipated power:	350 mW
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	0.1A
Technical parameters/minimum current amplification factor (hFE):	250 @100µA, 5V
Technical parameters/rated power (Max):	350 mW
Technical parameters/DC current gain (hFE):	250
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	350 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Height:	0.93 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
MMBT5087	Fairchild	功能相似	SOT-23-3	FAIRCHILD SEMICONDUCTOR MMBT5087 单晶体管双极, PNP, -50 V, 40 MHz, 350 mW, -100 mA, 250 hFE	PDF
MMBT5087	SK Hynix	功能相似		FAIRCHILD SEMICONDUCTOR MMBT5087 单晶体管双极, PNP, -50 V, 40 MHz, 350 mW, -100 mA, 250 hFE
MMBT5087	SHIKUES	功能相似	SOT-23-3	FAIRCHILD SEMICONDUCTOR MMBT5087 单晶体管双极, PNP, -50 V, 40 MHz, 350 mW, -100 mA, 250 hFE