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Model 2N6428
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN 60Vcbo 50Vceo 6.0Vebo 200mA 625mW
Product QR code
Brand: Central Semiconductor
Packaging TO-226-3
Delivery time
Packaging method
Standard packaging quantity 1
1.92  yuan 1.92yuan
5+:
$ 2.5974
25+:
$ 2.4050
50+:
$ 2.2703
100+:
$ 2.2126
500+:
$ 2.1741
2500+:
$ 2.1260
5000+:
$ 2.1068
10000+:
$ 2.0779
Quantity
5+
25+
50+
100+
500+
Price
$2.5974
$2.4050
$2.2703
$2.2126
$2.1741
Price $ 2.5974 $ 2.4050 $ 2.2703 $ 2.2126 $ 2.1741
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8364) Minimum order quantity(5)
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Technical parameters/polarity: NPN

Technical parameters/dissipated power: 625 mW

Technical parameters/breakdown voltage (collector emitter): 50 V

Technical parameters/maximum allowable collector current: 0.2A

Technical parameters/minimum current amplification factor (hFE): 250 @10mA, 5V

Technical parameters/rated power (Max): 1.5 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 1.5 W

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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2N6428 2N6428 Central Semiconductor 功能相似 TO-226-3
双极晶体管 - 双极结型晶体管(BJT) NPN 60Vcbo 50Vceo 6.0Vebo 200mA 625mW
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