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Model 2N5088RLRA
Description 双极晶体管 - 双极结型晶体管(BJT) 50mA 35V NPN
Product QR code
Brand: ON Semiconductor
Packaging TO-92-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7907) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

50.0 mA

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

625 W

 

Technical parameters/breakdown voltage (collector emitter):

30 V

 

Technical parameters/Maximum allowable collector current:

0.05A

 

Technical parameters/minimum current amplification factor (hFE):

300 @100µA, 5V

 

Technical parameters/rated power (Max):

625 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

625 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-92-3

 

Dimensions/Length:

5.2 mm

 

Dimensions/Width:

4.19 mm

 

Dimensions/Height:

5.33 mm

 

Dimensions/Packaging:

TO-92-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N5088RLRAG 2N5088RLRAG ON Semiconductor 完全替代 TO-226-3
TO-92 NPN 30V 0.05A
PDF
2N6428 2N6428 Central Semiconductor 功能相似 TO-226-3
双极晶体管 - 双极结型晶体管(BJT) NPN 60Vcbo 50Vceo 6.0Vebo 200mA 625mW
PDF

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