Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 25
Technical parameters/Maximum current amplification factor (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-225-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-225-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD681
|
ON Semiconductor | 功能相似 | TO-225-3 |
NPN 复合晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
||
BD681
|
Solid State | 功能相似 | TO-225 |
NPN 复合晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
||
BDX33BG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR BDX33BG 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 10 A, 750 hFE
|
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