Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 4.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 40000 mW |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 4A |
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Technical parameters/minimum current amplification factor (hFE): | 750 @1.5A, 3V |
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Technical parameters/rated power (Max): | 40 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 40000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-225-3 |
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Dimensions/Height: | 11.04 mm |
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Dimensions/Packaging: | TO-225-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Box |
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Other/Minimum Packaging: | 500 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD681
|
ON Semiconductor | 功能相似 | TO-225-3 |
NPN 复合晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
||
BD681
|
Solid State | 功能相似 | TO-225 |
NPN 复合晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
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