Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 50mA
Technical parameters/minimum current amplification factor (hFE): 250
Technical parameters/Maximum current amplification factor (hFE): 800
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Minimum Packaging: 2000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micro Electronics | 功能相似 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
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CJ | 功能相似 | TO-92 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
||
2N5087
|
Diotec Semiconductor | 功能相似 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
|||
2N5087
|
Freescale | 功能相似 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
|||
2N5087
|
Philips | 功能相似 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
|||
2N5087
|
Fairchild | 功能相似 | TO-92-3 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
||
2N5087
|
Motorola | 功能相似 | TO-92 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
||
2N5087
|
ROHM Semiconductor | 功能相似 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.05A Ic, 250 - hF
|
|||
2N5087G
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR 2N5087G 单晶体管 双极, 通用, PNP, 50 V, 40 MHz, 625 mW, -50 mA, 40 hFE
|
||
2N5087TA
|
Fairchild | 功能相似 | TO-226-3 |
Trans GP BJT PNP 50V 0.1A 3Pin TO-92 Ammo
|
||
2N5087TF
|
Fairchild | 功能相似 | TO-226-3 |
Trans GP BJT PNP 50V 0.1A 3Pin TO-92 T/R
|
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