Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 250 @100µA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5087G
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR 2N5087G 单晶体管 双极, 通用, PNP, 50 V, 40 MHz, 625 mW, -50 mA, 40 hFE
|
||
2N5087TF
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT PNP 50V 0.1A 3Pin TO-92 T/R
|
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