Technical parameters/polarity: NPN
Technical parameters/power consumption: 150 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 30A
Technical parameters/minimum current amplification factor (hFE): 15
Technical parameters/Maximum current amplification factor (hFE): 60
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3442G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N3442G 单晶体管 双极, NPN, 140 V, 80 kHz, 117 W, 10 A, 7.5 hFE 新
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Wings | 功能相似 |
Trans GP BJT NPN 90V 30A 3Pin(2+Tab) TO-3
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2N3771
|
Boca Semiconductor | 功能相似 |
Trans GP BJT NPN 90V 30A 3Pin(2+Tab) TO-3
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2N3771
|
NTE Electronics | 功能相似 |
Trans GP BJT NPN 90V 30A 3Pin(2+Tab) TO-3
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2N3771
|
Multicomp | 功能相似 |
Trans GP BJT NPN 90V 30A 3Pin(2+Tab) TO-3
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2N3771
|
ON Semiconductor | 功能相似 | TO-3 |
Trans GP BJT NPN 90V 30A 3Pin(2+Tab) TO-3
|
||
2N3771
|
Microsemi | 功能相似 | TO-3 |
Trans GP BJT NPN 90V 30A 3Pin(2+Tab) TO-3
|
||
2N3771G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N3771G. 双极晶体管
|
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