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Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3440
|
Microsemi | 类似代替 | TO-205 |
MULTICOMP 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 5 W, 1 A, 40 hFE
|
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2N3440
|
Motorola | 类似代替 | TO-205 |
MULTICOMP 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 5 W, 1 A, 40 hFE
|
||
|
|
Harris | 类似代替 |
MULTICOMP 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 5 W, 1 A, 40 hFE
|
|||
|
|
ON Semiconductor | 类似代替 | TO-205 |
MULTICOMP 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 5 W, 1 A, 40 hFE
|
||
2N3440
|
NTE Electronics | 类似代替 |
MULTICOMP 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 5 W, 1 A, 40 hFE
|
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|
|
Microchip | 类似代替 | Bulk |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
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JANTXV2N3440
|
Microsemi | 类似代替 | TO-39 |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
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