Technical parameters/working voltage: 5 V
Technical parameters/halogen-free state: Halogen Free
Technical parameters/breakdown voltage: 6 V|6 V
Technical parameters/number of circuits: 1
Technical parameters/number of pins: 2
Technical parameters/dissipated power: 1500 W
Technical parameters/clamp voltage: 9.4 V
Technical parameters/Maximum reverse voltage (Vrrm): 5V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 6 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 6 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: 41A-04
External dimensions/length: 9.5 mm
External dimensions/packaging: 41A-04
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: Consumer Electronics, Automation and Process Control, Medical, Industrial, General, Consumer Electronics, Industrial, Automation&Process Control, Medical, Communication and Networking, Power Management, Power Management, Communications&Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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1N6373RL4G
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1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor
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MPTE-5RL4G
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ON Semiconductor | 类似代替 | DO-201AD |
1500瓦峰值功率Mosorb TM齐纳瞬态电压抑制器 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
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