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Model 1N6373RL4G

Description 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型最高钳位电压 @ 峰值脉冲电流低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor

Brand: Littelfuse

Packaging DO-201AD

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Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(4409) Minimum order quantity(1)

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Technical parameters/number of pins:	2
Technical parameters/clamp voltage:	9.4 V
Technical parameters/test current:	1 mA
Technical parameters/maximum reverse breakdown voltage:	6 V
Technical parameters/peak pulse power:	1500 W
Technical parameters/minimum reverse breakdown voltage:	6 V
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/operating temperature:	-65℃ ~ 175℃
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	2
Encapsulation parameters/Encapsulation:	DO-201AD
Dimensions/Length:	9.5 mm
Dimensions/Packaging:	DO-201AD
Physical parameters/operating temperature:	-65℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Computers and computer peripherals, communication and networking, medical, general, power management, consumer electronics, automation and process control, industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
1N6373G	ON Semiconductor	完全替代	41A-04	1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型最高钳位电压 @ 峰值脉冲电流低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor	PDF
1N6373G	Littelfuse	完全替代	DO-201AD	1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型最高钳位电压 @ 峰值脉冲电流低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor	PDF
1N6373RL4	ON Semiconductor	功能相似	41A-04	1500瓦峰值功率Mosorb TM齐纳瞬态电压抑制器 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors	PDF