Technical parameters/forward voltage: 1.1V @12A
Technical parameters/thermal resistance: 2℃/W (RθJC)
Technical parameters/forward current: 12 A
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/forward current (Max): 12 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 150℃
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-4
External dimensions/height: 22.79 mm
External dimensions/packaging: DO-4
Physical parameters/operating temperature: 150 ℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N1206A
|
VISHAY | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
||
|
|
Diotec Semiconductor | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
||
1N1206A
|
GeneSiC Semiconductor | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
||
1N1206A
|
Vishay Semiconductor | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
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