Technical parameters/rated voltage (DC): | 600 V |
|
Technical parameters/rated current: | 12.0 A |
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Technical parameters/output current: | ≤12.0 A |
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Technical parameters/forward voltage: | 1.35 V |
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Technical parameters/polarity: | Standard |
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Technical parameters/forward current: | 12000 mA |
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Technical parameters/forward voltage (Max): | 1.1V @12A |
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Technical parameters/forward current (Max): | 12 A |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-4 |
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Dimensions/Packaging: | DO-4 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N1206A
|
VISHAY | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
||
|
|
Diotec Semiconductor | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
||
1N1206A
|
GeneSiC Semiconductor | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
||
1N1206A
|
Vishay Semiconductor | 功能相似 | DO-4 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
|
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