Technical parameters/rated power: 330 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.002 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 6450pF @25V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 270A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 6450pF @25V(Vds)
Technical parameters/descent time: 130 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1404SPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRF1404SPBF 晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
|
||
STB200NF04T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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