Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 9dB ~ 15.5dB
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/packaging: SC-70-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT-41532-BLKG
|
AVAGO Technologies | 完全替代 | SC-70-3 |
Trans RF BJT NPN 12V 0.05A 3Pin SOT-323 Bulk
|
||
AT-41532-TR1
|
AVAGO Technologies | 完全替代 | SC-70-3 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,50mA I(C),SOT-323
|
||
AT-41532-TR1G
|
AVAGO Technologies | 完全替代 | SC-70-3 |
射频(RF)双极晶体管 Transistor Si
|
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