Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 9dB ~ 15.5dB
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 270
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/length: 2.25 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT-41532-TR1G
|
AVAGO Technologies | 完全替代 | SC-70-3 |
射频(RF)双极晶体管 Transistor Si
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review