Technical parameters/frequency: 30MHz ~ 175MHz
Technical parameters/rated current: 6 A
Technical parameters/rated power: 115 W
Technical parameters/leakage source breakdown voltage: 125V (min)
Technical parameters/output power: 30 W
Technical parameters/gain: 15dB ~ 18dB
Technical parameters/test current: 100 mA
Technical parameters/Input capacitance (Ciss): 62pF @50V(Vds)
Technical parameters/dissipated power (Max): 115000 mW
Technical parameters/rated voltage: 120 V
Encapsulation parameters/installation method: Flange
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 211-07
External dimensions/packaging: 211-07
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/ELV standards: Compliant
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF175
|
Philips | 功能相似 | SOT-123 |
高频/甚高频功率MOS晶体管 HF/VHF power MOS transistor
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BLF175
|
NXP | 功能相似 | SOT123A |
高频/甚高频功率MOS晶体管 HF/VHF power MOS transistor
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BLF175,112
|
NXP | 功能相似 | SOT-123 |
Trans RF MOSFET N-CH 125V 4A 4Pin SOT-123A Bulk
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BLF175,112
|
Ampleon USA | 功能相似 | SOT-123 |
Trans RF MOSFET N-CH 125V 4A 4Pin SOT-123A Bulk
|
||
MRF148
|
Motorola | 功能相似 |
N-CHANNEL MOS LINEAR RF POWER FET
|
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