Technical parameters/frequency: | 108 MHz |
|
Technical parameters/rated current: | 4 A |
|
Technical parameters/dissipated power: | 68 W |
|
Technical parameters/output power: | 30 W |
|
Technical parameters/gain: | 20 dB |
|
Technical parameters/test current: | 30 mA |
|
Technical parameters/output power (Max): | 30 W |
|
Technical parameters/dissipated power (Max): | 68000 mW |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-123 |
|
Dimensions/Packaging: | SOT-123 |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF175
|
Philips | 功能相似 | SOT-123 |
Trans MOSFET N-CH 125V 4A 4Pin SOT-123A
|
||
BLF175
|
NXP | 功能相似 | SOT123A |
Trans MOSFET N-CH 125V 4A 4Pin SOT-123A
|
||
MRF148A
|
M/A-Com | 功能相似 | 211-07 |
线性射频功率场效应管30W ,为175MHz时, 50V Linear RF Power FET 30W, to 175MHz, 50V
|
||
MRF148A
|
M/A-Com | 功能相似 | 211-07 |
线性射频功率场效应管30W ,为175MHz时, 50V Linear RF Power FET 30W, to 175MHz, 50V
|
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