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Model NTHD5904NT3G
Description Power MOSFET 20 V, 4.5 A, Dual N-channel, ChipFET Power MOSFET 20 V, 4.5 A, Dual N-channel, ChipFET
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Brand: ON Semiconductor
Packaging SMD-8
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1558) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 20.0 V

Technical parameters/rated current: 3.30 A

Technical parameters/drain source resistance: 55.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 640mW (Ta)

Technical parameters/input capacitance: 465 pF

Technical parameters/gate charge: 4.00 nC

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±8.00 V

Technical parameters/Continuous drain current (Ids): 3.30 A

Technical parameters/Input capacitance (Ciss): 465pF @16V(Vds)

Technical parameters/dissipated power (Max): 640mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SMD-8

External dimensions/packaging: SMD-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTHD5904NT1 NTHD5904NT1 ON Semiconductor 完全替代 SMD-8
功率MOSFET的20 V ， 4.5 A ，双N沟道， ChipFET Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET
PDF
NTHD5904NT3 NTHD5904NT3 ON Semiconductor 完全替代 SMD-8
功率MOSFET的20 V ， 4.5 A ，双N沟道， ChipFET Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET
PDF

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