Technical parameters/rated voltage (DC): | 20.0 V |
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Technical parameters/rated current: | 3.30 A |
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Technical parameters/drain source resistance: | 55.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 640mW (Ta) |
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Technical parameters/Input capacitance: | 465 pF |
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Technical parameters/gate charge: | 4.00 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±8.00 V |
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Technical parameters/Continuous drain current (Ids): | 3.30 A |
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Technical parameters/Input capacitance (Ciss): | 465pF @16V(Vds) |
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Technical parameters/rated power (Max): | 640 mW |
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Technical parameters/dissipated power (Max): | 640mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SMD-8 |
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Dimensions/Packaging: | SMD-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTHD5904NT1
|
ON Semiconductor | 完全替代 | SMD-8 |
功率MOSFET的20 V , 4.5 A ,双N沟道, ChipFET Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET
|
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