Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 200
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Computers & Computer Peripherals, Automotive, Industrial, Military, Defence, Consumer Electronics, Aerospace, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LP38693SD-ADJ/NOPB
|
TI | 功能相似 | WSON-6 |
NXP LP38693SD-ADJ/NOPB. 单晶体管 双极, PNP, -30 V, 130 MHz, 700 mW, -5.3 A, 400 hFE
|
||
LP38693SD-ADJ/NOPB
|
NXP | 功能相似 | SOT-223 |
NXP LP38693SD-ADJ/NOPB. 单晶体管 双极, PNP, -30 V, 130 MHz, 700 mW, -5.3 A, 400 hFE
|
||
LP38693SD-ADJ/NOPB
|
National Semiconductor | 功能相似 | WSON-6 |
NXP LP38693SD-ADJ/NOPB. 单晶体管 双极, PNP, -30 V, 130 MHz, 700 mW, -5.3 A, 400 hFE
|
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