Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80 @5mA, 10V
Technical parameters/rated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-6
External dimensions/packaging: TSSOP-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSB4904DW1T1G
|
ON Semiconductor | 功能相似 | SOT-323-6 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
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||
PUMD12,115
|
Nexperia | 功能相似 | SC-88-6 |
NXP PUMD12,115 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 80 hFE, SOT-363
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