Technical parameters/number of channels: | 2 |
|
Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 5V |
|
Technical parameters/maximum current amplification factor (hFE): | 80 |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-88-6 |
|
Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SC-88-6 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, computer and computer peripherals, power management, automation and process control, automotive applications |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMD2,115
|
NXP | 功能相似 | SOT-363-6 |
Nexperia PUMD2,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 UMT封装
|
||
PUMD2,115
|
Nexperia | 功能相似 | SC-70-6 |
Nexperia PUMD2,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 UMT封装
|
||
PUMD2,165
|
Nexperia | 功能相似 | SC-70-6 |
1个NPN-预偏置,1个PNP-预偏置 100mA 50V
|
||
PUMD2,165
|
NXP | 功能相似 | SOT-363-6 |
1个NPN-预偏置,1个PNP-预偏置 100mA 50V
|
||
PUMD24,115
|
NXP | 功能相似 | SOT-363-6 |
TSSOP NPN+PNP 50V 20mA
|
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