Technical parameters/polarity: | NPN+PNP |
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Technical parameters/dissipated power: | 0.3 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 20mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363-6 |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-363-6 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5313DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5313DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SC-88
|
||
PUMD12,115
|
Nexperia | 功能相似 | SC-88-6 |
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm
|
||
PUMD2,115
|
NXP | 功能相似 | SOT-363-6 |
Nexperia PUMD2,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 UMT封装
|
||
PUMD2,115
|
Nexperia | 功能相似 | SC-70-6 |
Nexperia PUMD2,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚 UMT封装
|
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