Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 300 @10mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Motor drive and control, power management, industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZTX789ASTOA
|
Diodes | 完全替代 | E-Line-3 |
TRANS PNP 25V 3A E-LINE
|
||
ZTX789ASTZ
|
Zetex | 类似代替 | TO-92 |
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
||
ZTX789ASTZ
|
Diodes | 类似代替 | E-Line-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
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