Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 300 @10mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZTX789A
|
Diodes Zetex | 完全替代 | TO-92-3 |
DIODES INC. ZTX789A 单晶体管 双极, PNP, 25 V, 100 MHz, 1 W, 3 A, 300 hFE
|
||
ZTX789A
|
Zetex | 完全替代 | TO-92-3 |
DIODES INC. ZTX789A 单晶体管 双极, PNP, 25 V, 100 MHz, 1 W, 3 A, 300 hFE
|
||
ZTX789A
|
Diodes | 完全替代 | E-Line-3 |
DIODES INC. ZTX789A 单晶体管 双极, PNP, 25 V, 100 MHz, 1 W, 3 A, 300 hFE
|
||
ZTX789ASTZ
|
Zetex | 完全替代 | TO-92 |
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
||
ZTX789ASTZ
|
Diodes | 完全替代 | E-Line-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
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