Technical parameters/frequency: 140 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.5 W
Technical parameters/gain bandwidth product: 140 MHz
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 200 @10mA, 2V
Technical parameters/rated power (Max): 1.7 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2450 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DFN-8
External dimensions/packaging: DFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXTDBM832TA
|
Diodes Zetex | 功能相似 | VDFN-8 |
Bipolar Transistors - BJT 20V NPN 3X2 MLP
|
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