Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/minimum current amplification factor (hFE): 200 @2A, 2V
Technical parameters/rated power (Max): 1.7 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: VDFN-8
External dimensions/packaging: VDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXTD618MCTA
|
Diodes | 功能相似 | DFN-8 |
三极管(BJT) ZXTD618MCTA U-DFN3030-8
|
||
ZXTDBM832TA
|
Diodes Zetex | 功能相似 | VDFN-8 |
Bipolar Transistors - BJT 20V NPN 3X2 MLP
|
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