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Model VS-GB90DA120U
Description IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
Product QR code
Brand: VISHAY
Packaging SOT-227
Delivery time
Packaging method Tube
Standard packaging quantity 1
560  yuan 560yuan
1+:
$ 638.4034
10+:
$ 616.0033
50+:
$ 613.2033
100+:
$ 610.4033
150+:
$ 605.9232
250+:
$ 602.0032
500+:
$ 598.0832
1000+:
$ 593.6032
Quantity
1+
10+
50+
100+
150+
Price
$638.4034
$616.0033
$613.2033
$610.4033
$605.9232
Price $ 638.4034 $ 616.0033 $ 613.2033 $ 610.4033 $ 605.9232
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8409) Minimum order quantity(1)
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Technical parameters/dissipated power: 862000 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 862000 mW

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227

External dimensions/length: 38.3 mm

External dimensions/width: 25.7 mm

External dimensions/height: 12.3 mm

External dimensions/packaging: SOT-227

Physical parameters/operating temperature: -40℃ ~ 150℃

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VS-GB75DA120UP VS-GB75DA120UP Vishay Semiconductor 类似代替 SOT-227-4
VISHAY VS-GB75DA120UP IGBT Array & Module Transistor, NPN, 131A, 3.3V, 658W, 1.2kV, SOT-227
PDF
VS-GB75DA120UP VS-GB75DA120UP VISHAY 类似代替 SOT-227
VISHAY VS-GB75DA120UP IGBT Array & Module Transistor, NPN, 131A, 3.3V, 658W, 1.2kV, SOT-227
PDF

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