Technical parameters/polarity: P-Channel
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 600 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VQ2001J
|
Vishay Semiconductor | 功能相似 |
P-Channel Enhancement-Mode MOSFET Transistors
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VQ2001J
|
Temic | 功能相似 |
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VQ2001J
|
VISHAY | 功能相似 |
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|
|
VISHAY | 功能相似 | DIP-14 |
P-Channel Enhancement-Mode MOSFET Transistors
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VQ2001P
|
Vishay Semiconductor | 功能相似 | DIP |
P-Channel Enhancement-Mode MOSFET Transistors
|
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VQ2001P
|
Vishay Siliconix | 功能相似 | DIP-14 |
P-Channel Enhancement-Mode MOSFET Transistors
|
||
VQ2001P
|
Temic | 功能相似 |
P-Channel Enhancement-Mode MOSFET Transistors
|
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