Technical parameters/drain source resistance: | 2 Ω |
|
Technical parameters/polarity: | 4*P-CH |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 600mA |
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Technical parameters/dissipated power (Max): | 2 W |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DIP-14 |
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Dimensions/Packaging: | DIP-14 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Minimum Packaging: | 25 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VQ2001J
|
Vishay Semiconductor | 功能相似 |
P-Channel Enhancement-Mode MOSFET Transistors
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VQ2001J
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Temic | 功能相似 |
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VQ2001J
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VISHAY | 功能相似 |
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VISHAY | 功能相似 | DIP-14 |
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VQ2001P
|
Vishay Semiconductor | 功能相似 | DIP |
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VQ2001P
|
Vishay Siliconix | 功能相似 | DIP-14 |
P-Channel Enhancement-Mode MOSFET Transistors
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VQ2001P
|
Temic | 功能相似 |
P-Channel Enhancement-Mode MOSFET Transistors
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