Technical parameters/rated power: 360 mW
Technical parameters/drain source resistance: 350 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 6 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.70 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS170
|
GE | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
ON Semiconductor | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
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