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Model VB60100C-E3/4W
Description TMBS - Trench MOS Barrier Schottky rectifier, 30A to 80A, Vishay Semiconductor's Trench MOS Barrier Schottky (TMBS) rectifier series includes patented Trench structures. Compared with planar Schottky rectifiers, TMBS rectifiers can provide multiple advantages. When the working voltage is 45V or higher, the planar Schottky rectifier loses its advantage of fast conversion speed and the low forward voltage drop reaches an extreme level. The patented TMBS structure solves these problems by reducing the injection of carriers into the drift region to the greatest extent possible, thereby minimizing the accumulation of charges and improving conversion speed. The patented Trench structure improves the efficiency of AC/DC switch mode power supplies and DC/DC converters with high power density and low forward voltage. Features: Schottky rectifier, Vishay Semiconductor
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Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
9.03  yuan 9.03yuan
10+:
$ 10.8396
100+:
$ 10.2976
500+:
$ 9.9363
1000+:
$ 9.9182
2000+:
$ 9.8460
5000+:
$ 9.7556
7500+:
$ 9.6834
10000+:
$ 9.6472
Quantity
10+
100+
500+
1000+
2000+
Price
$10.8396
$10.2976
$9.9363
$9.9182
$9.8460
Price $ 10.8396 $ 10.2976 $ 9.9363 $ 9.9182 $ 9.8460
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6559) Minimum order quantity(10)
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Technical parameters/forward voltage: 790mV @30A

Technical parameters/forward current: 30 A

Technical parameters/Maximum forward surge current (Ifsm): 320 A

Technical parameters/forward current (Max): 60 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.45 mm

External dimensions/width: 9.14 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -40℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB60100C-E3/8W VB60100C-E3/8W Vishay Semiconductor 完全替代 TO-263-3
V60100C 系列 100 V 2 x 30 A 双 高压 肖特基 整流器 - TO-263AB
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