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Technical parameters/forward voltage: 0.81V @20A
Technical parameters/Maximum reverse voltage (Vrrm): 100 V
Technical parameters/forward current: 40 A
Technical parameters/Maximum forward surge current (Ifsm): 200 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Packaging Methods: Tape
Other/Minimum Packaging: 800
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VB40100G-E3/4W
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
双高压Trench MOS势垒肖特基整流器超低VF = 0.42 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
|
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