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Model VB40100G-E3/4W
Description Dual high voltage Trench MOS barrier Schottky rectifier with ultra-low VF=0.42 V IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
7.3  yuan 7.3yuan
10+:
$ 8.7540
100+:
$ 8.3163
500+:
$ 8.0245
1000+:
$ 8.0099
2000+:
$ 7.9516
5000+:
$ 7.8786
7500+:
$ 7.8202
10000+:
$ 7.7911
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7540
$8.3163
$8.0245
$8.0099
$7.9516
Price $ 8.7540 $ 8.3163 $ 8.0245 $ 8.0099 $ 7.9516
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1289) Minimum order quantity(10)
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Technical parameters/forward voltage: 810mV @20A

Technical parameters/forward voltage (Max): 810mV @20A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB40100G-E3/4W VB40100G-E3/4W Vishay Semiconductor 完全替代 TO-263-3
双高压Trench MOS势垒肖特基整流器超低VF = 0.42 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
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