Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 2.40 A
Technical parameters/drain source resistance: 135 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 870 mW
Technical parameters/input capacitance: 290 pF
Technical parameters/gate charge: 8.00 nC
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.30 A
Technical parameters/rise time: 4.10 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape, Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXMD63N03XTA
|
Diodes Zetex | 类似代替 | MSOP |
ZXMD63N02X 系列 30 V 0.135 Ohm 双 N-沟道 增强模式 MOSFET -MSOP-8
|
||
ZXMD63N03XTA
|
Diodes | 类似代替 | MSOP-8 |
ZXMD63N02X 系列 30 V 0.135 Ohm 双 N-沟道 增强模式 MOSFET -MSOP-8
|
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