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Model ZXMD63N03XTA
Description ZXMD63N02X 系列 30 V 0.135 Ohm 双 N-沟道 增强模式 MOSFET -MSOP-8
Product QR code
Brand: Diodes
Packaging MSOP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.16  yuan 1.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8977) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

2.40 A

 

Technical parameters/number of channels:

2

 

Technical parameters/drain source resistance:

135 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/Input capacitance:

290 pF

 

Technical parameters/gate charge:

8.00 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.30 A

 

Technical parameters/rise time:

4.1 ns

 

Technical parameters/Input capacitance (Ciss):

290pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.04 W

 

Technical parameters/descent time:

4.4 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1250 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

MSOP-8

 

Dimensions/Length:

3.1 mm

 

Dimensions/Width:

3.1 mm

 

Dimensions/Height:

0.95 mm

 

Dimensions/Packaging:

MSOP-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
ZXMD63N03XTC ZXMD63N03XTC Diodes 类似代替 SOIC
MOSFET 2N-CH 30V 2.3A 8MSOP
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