Technical parameters/rated voltage (DC): -240 V
Technical parameters/rated current: -1.00 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 9 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 100 pF
Technical parameters/drain source voltage (Vds): 240 V
Technical parameters/leakage source breakdown voltage: 240 V
Technical parameters/breakdown voltage of gate source: ±40.0 V
Technical parameters/Continuous drain current (Ids): 480 mA
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 200pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZVP4424G
|
Vishay Semiconductor | 功能相似 | SOT-223 |
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
|
||
ZVP4424GTC
|
Diodes | 功能相似 | SOT-223 |
MOSFET Power P-Chnl 240V
|
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