Technical parameters/rated voltage (DC): | -240 V |
|
Technical parameters/rated current: | -1.00 A |
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Technical parameters/drain source resistance: | 11.0 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/Input capacitance: | 100 pF |
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Technical parameters/drain source voltage (Vds): | 240 V |
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Technical parameters/breakdown voltage of gate source: | ±40.0 V |
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Technical parameters/Continuous drain current (Ids): | 480 mA |
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Technical parameters/rise time: | 8.00 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-223 |
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Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZVP4424G
|
Vishay Semiconductor | 类似代替 | SOT-223 |
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
|
||
ZVP4424GTA
|
Diodes Zetex | 功能相似 | SOT-223 |
ZVP4424GTA 编带
|
||
ZVP4424GTA
|
Diodes | 功能相似 | TO-261-4 |
ZVP4424GTA 编带
|
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