Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 200 mA
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 10 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/input capacitance: 40.0 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 40pF @25V(Vds)
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 625mW (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/packaging: E-Line-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZVN3310A
|
Zetex | 功能相似 | TO-92-3 |
三极管
|
||
ZVN3310A
|
Diodes | 功能相似 | TO-92-3 |
三极管
|
||
ZVN3310A
|
Diodes Zetex | 功能相似 | TO-92-3 |
三极管
|
||
ZVN3310ASTOB
|
Vishay Semiconductor | 功能相似 | E-Line-3 |
MOSFET N-CH 100V 200mA TO92-3
|
||
ZVN3310ASTOB
|
Diodes Zetex | 功能相似 | TO-92-3 |
MOSFET N-CH 100V 200mA TO92-3
|
||
|
|
Diodes | 功能相似 | TO-92-3 |
MOSFET N-CH 100V 200mA TO92-3
|
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