Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 200 mA |
|
Technical parameters/drain source resistance: | 10.0 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 625mW (Ta) |
|
Technical parameters/Input capacitance: | 40.0 pF |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Leakage source breakdown voltage: | 100 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 200 mA |
|
Technical parameters/rise time: | 7.00 ns |
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Technical parameters/Input capacitance (Ciss): | 40pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 625mW (Ta) |
|
Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | E-Line-3 |
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Dimensions/Packaging: | E-Line-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape, Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN1206L-G
|
Microchip | 功能相似 | TO-92-3 |
Trans MOSFET N-CH 120V 0.23A 3Pin TO-92
|
||
VN1206L-G
|
Supertex | 功能相似 | TO-92-3 |
Trans MOSFET N-CH 120V 0.23A 3Pin TO-92
|
||
ZVN3310A
|
Zetex | 类似代替 | TO-92-3 |
三极管
|
||
ZVN3310A
|
Diodes | 类似代替 | TO-92-3 |
三极管
|
||
ZVN3310A
|
Diodes Zetex | 类似代替 | TO-92-3 |
三极管
|
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