Technical parameters/rated power: 1 W
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 120 V
Technical parameters/leakage source breakdown voltage: 120 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 230 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN1206L-G-P002
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 120V 0.23A 3Pin TO-92 T/R
|
||
|
|
Supertex | 功能相似 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs
|
|||
ZVN3310A
|
Zetex | 功能相似 | TO-92-3 |
三极管
|
||
ZVN3310A
|
Diodes | 功能相似 | TO-92-3 |
三极管
|
||
ZVN3310A
|
Diodes Zetex | 功能相似 | TO-92-3 |
三极管
|
||
ZVN3310ASTOB
|
Vishay Semiconductor | 功能相似 | E-Line-3 |
MOSFET N-CH 100V 200mA TO92-3
|
||
ZVN3310ASTOB
|
Diodes Zetex | 功能相似 | TO-92-3 |
MOSFET N-CH 100V 200mA TO92-3
|
||
|
|
Diodes | 功能相似 | TO-92-3 |
MOSFET N-CH 100V 200mA TO92-3
|
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