Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 200 mA
Technical parameters/drain source resistance: 5.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/input capacitance: 35.0 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/rise time: 7.00 ns
Technical parameters/Input capacitance (Ciss): 35pF @25V(Vds)
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape, Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002-7-F
|
Multicomp | 类似代替 | SOT-23 |
2N7002-7-F 编带
|
||
BSS123TA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
BSS138-7-F
|
Multicomp | 功能相似 | SOT-23 |
N沟道增强型场效应晶体管低导通电阻低栅极阈值电压低输入电容开关速度快低输入/输出漏
|
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