Technical parameters/dissipated power: 2400 mW
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 680pF @13V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2400 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4778DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
Trans MOSFET N-CH 25V 8A 8Pin SOIC N T/R
|
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