Technical parameters/rated power: 0.15 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 560 @1mA, 6V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: VMT-6
External dimensions/packaging: VMT-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VT6T2T2R
|
ROHM Semiconductor | 功能相似 | SMD-6 |
VMT PNP 50V 0.1A
|
||
VT6X2T2R
|
ROHM Semiconductor | 功能相似 | VMT-6 |
双极晶体管 - 双极结型晶体管(BJT) TRANS GP BJT NPN 50V 0.1A 6PIN
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review