Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 120 @1mA, 6V |
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Technical parameters/rated power (Max): | 150 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 150 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SMD-6 |
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Dimensions/Packaging: | SMD-6 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VT6X2T2R
|
ROHM Semiconductor | 功能相似 | VMT-6 |
双极晶体管 - 双极结型晶体管(BJT) TRANS GP BJT NPN 50V 0.1A 6PIN
|
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