Technical parameters/forward voltage: 1.28V @30A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
V30120S-E3/4W
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Vishay Semiconductor | 功能相似 | TO-220-3 |
高压Trench MOS势垒肖特基整流器超低VF = 0.43 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
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|
VISHAY | 完全替代 | TO-220 |
Diode Schottky 120V 30A 3Pin(3+Tab) TO-220AB Tube
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|
Vishay Siliconix | 完全替代 | TO-220 |
Diode Schottky 120V 30A 3Pin(3+Tab) TO-220AB Tube
|
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V30120SHM3/4W
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
Diode Schottky 120V 30A 3Pin(3+Tab) TO-220AB Tube
|
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