Technical parameters/forward voltage: 1.25 V
Technical parameters/reverse recovery time: 50 ns
Technical parameters/Maximum reverse voltage (Vrrm): 300 V
Technical parameters/forward current: 5 A
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
V30120S-E3/4W
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
高压Trench MOS势垒肖特基整流器超低VF = 0.43 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
|
||
V30120S-M3/4W
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
Diode Schottky 120V 30A 3Pin(3+Tab) TO-220AB Tube
|
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