Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80 @5mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSSOP-363
External dimensions/height: 1 mm
External dimensions/packaging: TSSOP-363
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5113DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5113DW1T1G 单晶体管 双极, 双PNP, 50 V, 250 mW, 100 mA, 80 hFE
|
||
PUMB2
|
Philips | 功能相似 | SOT-363 |
NXP PUMB2 双极晶体管阵列, BRT, PNP, 50 V, 200 mW, -100 mA, 80 hFE, SOT-363
|
||
PUMB2
|
Nexperia | 功能相似 | UMT |
NXP PUMB2 双极晶体管阵列, BRT, PNP, 50 V, 200 mW, -100 mA, 80 hFE, SOT-363
|
||
PUMB2
|
NXP | 功能相似 | SOT-363 |
NXP PUMB2 双极晶体管阵列, BRT, PNP, 50 V, 200 mW, -100 mA, 80 hFE, SOT-363
|
||
PUMB2,115
|
NXP | 类似代替 | TSSOP-363 |
Nexperia PUMB2,115 双 PNP 数字晶体管, 100 mA, Vce=50 V, 47 kΩ, 电阻比:1, 6引脚 UMT封装
|
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